ROHM Semiconductor GmbH 60V Nch+Pch Power MOSFET HP8M31

Description
HP8M31TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for motor drive.
Description
HP8M31TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for motor drive.
Datasheet
Datasheet Summary
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The HP8M31 is a 60V N-channel and P-channel power MOSFET pair in an HSOP8 surface-mount package, designed for motor drive applications. It has a maximum continuous drain current of ±8.5A and a total power dissipation of 7.0W. The N-channel device has a maximum on-resistance of 65mΩ at 10V gate drive, and the P-channel device has 70mΩ at -10V gate drive. Both devices feature a gate-source voltage rating of ±20V, a junction temperature range of -55°C to +150°C, and are RoHS compliant and halogen free. Thermal resistance from junction to ambient is 41.7°C/W when mounted on a 40×40×0.8mm copper board.

Datasheet Summary
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The HP8M31 is a 60V N-channel and P-channel power MOSFET pair in an HSOP8 surface-mount package, designed for motor drive applications. It has a maximum continuous drain current of ±8.5A and a total power dissipation of 7.0W. The N-channel device has a maximum on-resistance of 65mΩ at 10V gate drive, and the P-channel device has 70mΩ at -10V gate drive. Both devices feature a gate-source voltage rating of ±20V, a junction temperature range of -55°C to +150°C, and are RoHS compliant and halogen free. Thermal resistance from junction to ambient is 41.7°C/W when mounted on a 40×40×0.8mm copper board.

Suppliers

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60V Nch+Pch Power MOSFET - HP8M31 - ROHM Semiconductor GmbH
Willich, Germany
60V Nch+Pch Power MOSFET
HP8M31
60V Nch+Pch Power MOSFET HP8M31
HP8M31TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for motor drive.

HP8M31TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for motor drive.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH
Product Category Power MOSFET
Product Number HP8M31
Product Name 60V Nch+Pch Power MOSFET
Polarity N-Channel; P-Channel
V(BR)DSS 60 volts
IDSS 8500 milliamps
QG 6.2 nC
PD 7000 milliwatts
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