The GNE1040TB is a 150V enhancement-mode gallium nitride (GaN) power transistor in a DFN5060 package, designed for high-efficiency switching applications such as half-bridge topologies and AC/DC converters. It has a typical on-resistance of 40 mΩ at 25°C and a continuous drain current rating of 10 A at Tc=25°C. The gate-source voltage is rated from -2 to +8 V, with a recommended drive voltage of 0 to +5 V. Thermal resistance from junction to case is 1.8°C/W and from junction to ambient is 48°C/W.
GNE1040TB is an 8V Gate Source Voltage 150V GaN HEMT. It is a product of the EcoGaN™ series that contributes to power conversion efficiency and reducing size by making the best use of low ON resistance and high-speed switching, and the power supply efficiency is 96.5% or more even in the high frequency band of 1MHz. In addition, the highly versatile packages provide excellent heat dissipation and facilitates mounting.
| ROHM Semiconductor GmbH | |
|---|---|
| Product Category | Transistors |
| Product Number | GNE1040TB |
| Product Name | EcoGaN™, 150V 10A DFN5060, E-mode Gallium-Nitride(GaN) HEMT |
| Package Type | DFN5060 |
