The EMZ1 is a dual transistor device integrating an NPN and a PNP transistor in an SOT-563 package, designed for general purpose small signal amplification. It has a collector-emitter voltage rating of 50 V for the NPN and -50 V for the PNP, with a collector current of 150 mA for both. Total power dissipation is 150 mW, with no more than 120 mW per element. The device meets RoHS standards and is suitable for automatic mounting on EMT3-compatible land patterns. Its junction temperature range is -55°C to +150°C.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | EMZ1 | EMZ1 |
| Product Name | NPN+PNP, SOT-563, General Purpose Amplification Transistor | PNP+NPN General Purpose Amplification Transistor |
| Polarity | NPN; PNP | NPN; PNP |
