ROHM Semiconductor GmbH NPN+NPN, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor) EMH4

Description
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Description
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Datasheet
Datasheet Summary
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The EMH4 is a dual NPN digital transistor in a SOT-563 package, integrating two independent transistors with built-in bias resistors for use in inverters, interfaces, and drivers. Each transistor has a collector-emitter voltage rating of 50 V, a collector current rating of 100 mA, and a power dissipation limit of 150 mW total, with no more than 120 mW per element. The device features a collector-emitter saturation voltage of up to 300 mV at 10 mA collector current and 1 mA base current, and a DC current gain ranging from 100 to 600. The package dimensions match the SOT-563 standard, suitable for automated SMT mounting. The junction temperature range is -55 to 150 °C. The input resistance is specified between 7 and 13 kΩ.

Datasheet Summary
Powered by GS/AI

The EMH4 is a dual NPN digital transistor in a SOT-563 package, integrating two independent transistors with built-in bias resistors for use in inverters, interfaces, and drivers. Each transistor has a collector-emitter voltage rating of 50 V, a collector current rating of 100 mA, and a power dissipation limit of 150 mW total, with no more than 120 mW per element. The device features a collector-emitter saturation voltage of up to 300 mV at 10 mA collector current and 1 mA base current, and a DC current gain ranging from 100 to 600. The package dimensions match the SOT-563 standard, suitable for automated SMT mounting. The junction temperature range is -55 to 150 °C. The input resistance is specified between 7 and 13 kΩ.

Suppliers

Company
Product
Description
Supplier Links
NPN+NPN, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor) - EMH4 - ROHM Semiconductor GmbH
Willich, Germany
NPN+NPN, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor)
EMH4
NPN+NPN, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor) EMH4
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.

Supplier's Site Datasheet
NPN+NPN Digital transistor(with built-in resistors) - EMH4 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
NPN+NPN Digital transistor(with built-in resistors)
EMH4
NPN+NPN Digital transistor(with built-in resistors) EMH4
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Transistors Transistors
Product Number EMH4 EMH4
Product Name NPN+NPN, SOT-563, Dual Digital Transistor (Bias Resistor Built-in Transistor) NPN+NPN Digital transistor(with built-in resistors)
Polarity NPN NPN
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