ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH3T2R EMH3T2R

Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 015314-EMH3T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Active Case / Package: EMT6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 150mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Rohm Semiconductor Win Source Part Number: 015314-EMH3T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Active Case / Package: EMT6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 150mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH3T2R - 015314-EMH3T2R - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH3T2R
015314-EMH3T2R
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH3T2R 015314-EMH3T2R
Manufacturer: Rohm Semiconductor Win Source Part Number: 015314-EMH3T2R Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 250MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Categories: Discrete Semiconductor Products Status: Active Case / Package: EMT6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 250μA, 5mA Typical Gain (hFE) (Min): 100 @ 1mA, 5V Maximum Power Dissipation: 150mW Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Sufficient

Manufacturer: Rohm Semiconductor
Win Source Part Number: 015314-EMH3T2R
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: EMT6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 250μA, 5mA
Typical Gain (hFE) (Min): 100 @ 1mA, 5V
Maximum Power Dissipation: 150mW
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMH3T2RDKR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMH3T2RDKR-ND
Bipolar Transistor Arrays, Pre-Biased EMH3T2RDKR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMH3T2RCT-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMH3T2RCT-ND
Bipolar Transistor Arrays, Pre-Biased EMH3T2RCT-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMH3T2RTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
EMH3T2RTR-ND
Bipolar Transistor Arrays, Pre-Biased EMH3T2RTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount EMT6

Buy Now Datasheet
Singapore, Singapore
0.15W Bipolar Transistor
293-EMH3T2R
0.15W Bipolar Transistor 293-EMH3T2R
TRANS 2NPN PREBIAS 0.15W EMT6 Product overview: EMH3T2R from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMH3T2R can be used for catalog matching and distributor lookup.

TRANS 2NPN PREBIAS 0.15W EMT6 Product overview: EMH3T2R from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.15W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.15W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-EMH3T2R can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - EMH3T2R - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
EMH3T2R
Bipolar Transistor Arrays, Pre-Biased EMH3T2R
TRANS 2NPN PREBIAS 0.15W EMT6

TRANS 2NPN PREBIAS 0.15W EMT6

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - EMH3T2R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
EMH3T2R
Discrete Semiconductor Products - Transistors - Bipolar (BJT) EMH3T2R
TRANS 2NPN PREBIAS 0.15W EMT6

TRANS 2NPN PREBIAS 0.15W EMT6

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
EMH3T2R
Bipolar Transistors - Pre-Biased EMH3T2R
Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA

Bipolar Transistors - Pre-Biased DUAL NPN 50V 100MA

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 015314-EMH3T2R EMH3T2RDKR-ND 293-EMH3T2R EMH3T2R EMH3T2R EMH3T2R
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - EMH3T2R Bipolar Transistor Arrays, Pre-Biased 0.15W Bipolar Transistor Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - Pre-Biased
Polarity NPN; 2 NPN - Pre-Biased (Dual) NPN NPN 2 NPN - Pre-Biased (Dual); NPN
Package Type SOT3; EMT6 SOT-563, SOT-666 Tape & Reel (TR) SOT-563, SOT-666
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100 milliamps 100 milliamps 100 milliamps
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