The EMG3 is a dual NPN digital transistor with built-in bias resistors in a SOT-553 package, designed for inverter, interface, and driver applications. Each transistor has a collector-emitter voltage rating of 50 V, a collector current rating of 100 mA, and a total power dissipation of 150 mW. The input resistance is 4.7 kΩ, and the DC current gain ranges from 100 to 600. The device features a collector-emitter saturation voltage of up to 300 mV at 5 mA collector current and 0.25 mA base current. The junction temperature range extends from -55 °C to +150 °C.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillators, driver ICs and so forth.
Devices integrating two transistors are available in ultra-compact packages, suitable for various applications such as pre-amplifier differential amplification circuits, high-frequency oscillattors, driver ICs and so forth.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | EMG3 | EMG3 |
| Product Name | NPN+NPN, SOT-553, Dual Digital Transistor (Bias Resistor Built-in Transistor) | NPN+NPN Digital transistor(with built-in resistors) |
| Polarity | NPN | NPN |
