DTD114EC is an NPN digital transistor with built-in bias resistors (R1 = R2 = 10 kΩ) for use in inverter, interface, and driver circuits. It is packaged in an SOT-23 case and rated for a maximum collector current of 500 mA and collector-emitter voltage of 50 V. The device has a power dissipation limit of 200 mW and a junction temperature range up to 150 °C. Input current at 5 V is up to 880 μA, with an output saturation voltage of up to 300 mV at 50 mA collector current. DC current gain is specified at a minimum of 56 when I_O = 50 mA. The transition frequency is 200 MHz. The part includes complementary PNP variant DTB114EC.
DTD114EC is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
DTD114EC is an digital transistor (Resistor built-in type transistor). Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
|---|---|---|
| Product Category | Transistors | Transistors |
| Product Number | DTD114EC | DTD114EC |
| Product Name | NPN, SOT-23, R1=R2 Potential Divider Type Digital Transistor (Bias Resistor Built-in Transistor) | 500mA/50V Digital transistor (with built-in resistors) |
| Polarity | NPN | NPN |
