ROHM Semiconductor USA, LLC TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - DTC363EUT106 DTC363EUT106

Manufacturer: Rohm Semiconductor
Win Source Part Number: 051017-DTC363EUT106
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 200MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 6.8k
Resistor - Emitter Base (R2) (Ohms): 6.8k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: UMT3
Maximum Current Collector: 600mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Max Vce (sat): 80mV @ 2.5mA, 50mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 70 @ 50mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Sufficient

TRANS PREBIAS NPN 20V 0.6A UMT3 Product overview: DTC363EUT106 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 0.6A. Search-friendly keywords include transistor, BJT, switching, amplification, 20V, 0.6A, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DTC363EUT106 can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 20V 600mA 200MHz 200mW Surface Mount UMT3