ROHM Semiconductor USA, LLC 50V Bipolar Transistor DTA114EUAT106

TRANS PREBIAS PNP 50V UMT3 Product overview: DTA114EUAT106 from ROHM Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-DTA114EUAT106 can be used for catalog matching and distributor lookup.

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 50mA 250MHz 200mW Surface Mount UMT3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 50mA 250MHz 200mW Surface Mount UMT3

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 50mA 250MHz 200mW Surface Mount UMT3

Manufacturer: Rohm Semiconductor
Win Source Part Number: 014945-DTA114EUAT106
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 250MHz
Transistor Polarity: PNP - Pre-Biased
Family Name: DTA114EUA
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Status: Active
Case / Package: UMT3
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 500nA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Alternative Parts (Cross-Reference): RT1P141M; SRA2202U; DDTA114EUA-13;
Introduction Date: November 23, 1998
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient