Rochester Electronics Memory X28C512JZ-12

Description
EEPROM, 64KX8, 5V, PARALLEL
  • Memory - X28C512JZ-12 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
EEPROM, 64KX8, 5V, PARALLEL
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - X28C512JZ-12 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
X28C512JZ-12
Memory X28C512JZ-12
EEPROM, 64KX8, 5V, PARALLEL

EEPROM, 64KX8, 5V, PARALLEL

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number X28C512JZ-12
Product Name Memory
Memory Category EEPROM; EEPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71016S15YGI - Lingto Electronic Limited
Rochester Electronics
Memory
71016S15YGI
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details
Flash Memory - 1882565 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882565
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - AS4SD8M16 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4SD8M16
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 64000 kbits
View Details
Memory - 309977-128 01 - Lingto Electronic Limited
Infineon Technologies AG
Memory
309977-128 01
View Details
2 suppliers