Rochester Electronics Memory UPD46184182BF1-E33Y-EQ1-A

Description
DDR SRAM, 1MX18, 0.45NS
  • Memory - UPD46184182BF1-E33Y-EQ1-A - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
DDR SRAM, 1MX18, 0.45NS
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - UPD46184182BF1-E33Y-EQ1-A - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
UPD46184182BF1-E33Y-EQ1-A
Memory UPD46184182BF1-E33Y-EQ1-A
DDR SRAM, 1MX18, 0.45NS

DDR SRAM, 1MX18, 0.45NS

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number UPD46184182BF1-E33Y-EQ1-A
Product Name Memory
Unlock Full Specs
to access all available technical data

Similar Products

- 9403ASDMQB - Rochester Electronics
Texas Instruments
Integrated Circuits (ICs) - Logic - FIFOs Memory
9403ASDMQB
Specs
Memory Category FIFO
Package Type DIP; DIP24
View Details
3 suppliers
Memory - 71024S15YI - Lingto Electronic Limited
Rochester Electronics
Memory
71024S15YI
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details
Memory - 256089-001 04 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
256089-001 04
View Details
2 suppliers
Memory - MT5C1009 - Micross Components, Inc.
Micross Components, Inc.
Memory
MT5C1009
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details