Rochester Electronics Memory TN28F010-150-G

Description
28F010 - 128K X 8 Flash
Request a Quote Datasheet
Description
28F010 - 128K X 8 Flash
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - TN28F010-150-G - Rochester Electronics
Newburyport, MA, United States
28F010 - 128K X 8 Flash

28F010 - 128K X 8 Flash

Supplier's Site Datasheet
Memory - TN28F010-150-G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now Datasheet
TN28F010-150-G

TN28F010-150-G

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - TN28F010-150-G - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
TN28F010-150-G
Integrated Circuits (ICs) - Memory - Memory TN28F010-150-G
TN28F010-150-G

TN28F010-150-G

Supplier's Site

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number TN28F010-150-G TN28F010-150-G TN28F010-150-G TN28F010-150-G
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - Flash - S25FL128SAGMFI010 - 892878-S25FL128SAGMFI010 - Win Source Electronics
Specs
Memory Category Flash
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC
View Details
2 suppliers
 - MD28F010-25/B - Rochester Electronics
Rochester Electronics
Specs
Memory Category Flash
Package Type DIP; PDIP32
View Details
4 suppliers
Memory - 71024S12YGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - 24C04/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 4 kbits
View Details