Rochester Electronics Memory 27C010-55DM/B

Description
27C010 EPROM
Datasheet
Description
27C010 EPROM
Datasheet

Suppliers

Company
Product
Description
Supplier Links
27C010 EPROM

27C010 EPROM

Supplier's Site Datasheet
Memory - 27C010-55DM/B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - OTP Memory IC 1Mbit Parallel 55 ns 32-CDIP

EPROM - OTP Memory IC 1Mbit Parallel 55 ns 32-CDIP

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 27C010-55DM/B 27C010-55DM/B
Product Name Memory Memory
Memory Category EPROM; EPROM EPROM; EPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - RAM - MT5C1008ECA55L883C - 1232483-MT5C1008ECA55L883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
Memory - 16-4099-01-T - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420777P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Controllers - BQ2204ASN-NTRG4 - Quarktwin Technology Ltd.
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 16-SOIC (0.154\", 3.90mm Width)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers