Rochester Electronics Memory 27C010-55DM/B

Description
27C010 EPROM
  • Memory - 27C010-55DM/B - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - 27C010-55DM/B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
27C010 EPROM
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 27C010-55DM/B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
27C010-55DM/B
Memory 27C010-55DM/B
27C010 EPROM

27C010 EPROM

Supplier's Site Datasheet
Memory - 27C010-55DM/B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
27C010-55DM/B
Memory 27C010-55DM/B
EPROM - OTP Memory IC 1Mbit Parallel 55 ns 32-CDIP

EPROM - OTP Memory IC 1Mbit Parallel 55 ns 32-CDIP

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 27C010-55DM/B 27C010-55DM/B
Product Name Memory Memory
Memory Category EPROM; EPROM EPROM; EPROM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8FLC1M32A - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8FLC1M32A
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Infineon Technologies AG
Integrated Circuits (ICs) - Memory - Memory
40060912
View Details
Flash Memory - 1882635P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882635P
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details
Integrated Circuits (ICs) - Memory - Memory - NM27C020T200 - Shenzhen Shengyu Electronics Technology Limited
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
NM27C020T200
Specs
Memory Category EPROM; Non-Volatile
Cycle Time 200 ns
Density 2000 kbits
View Details
2 suppliers