Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - PMZ320UPEYL PMZ320UPEYL

P-channel enhancement mode MOSFET in a leadless ultra small DFN1006-3 (SOT883) surface-mount package measuring 1.0 × 0.6 × 0.48 mm, designed for high-speed switching and load switching applications. It has a drain-source voltage rating of -30 V, a continuous drain current of -1 A at 25 °C, and a drain-source on-state resistance of 430 to 510 mΩ at -4.5 V gate-source voltage and 25 °C. The device supports ESD protection exceeding 2 kV HBM and operates with a junction temperature range of -55 to 150 °C.