Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - NTMFS4C302NT1G NTMFS4C302NT1G

The NTMFS4C302N is an N-channel MOSFET designed for high-current switching applications, with a 30 V drain-to-source voltage rating and a continuous drain current of 230 A at TC = 25°C. It is packaged in a 5 mm × 6 mm SO-8 Flat Lead (SO-8 FL) surface-mount case with a thermal resistance junction-to-case of 1.3 °C/W when mounted on a 650 mm², 2 oz. Cu FR4 pad. The device exhibits a maximum RDS(on) of 1.15 mΩ at 10 V and 1.7 mΩ at 4.5 V gate drive. It is RoHS compliant, Pb-free, and meets the AEC-Q200 automotive qualification standard. Maximum power dissipation is 96 W at TC = 25°C and 3.13 W at TA = 25°C. The operational junction and storage temperature range is -55°C to +150°C.