Rochester Electronics IGBTs - Single - IRGP4069D-EPBF IRGP4069D-EPBF

The IRGP4069D-EPbF is an insulated gate bipolar transistor with an ultrafast soft recovery diode, designed for high-efficiency switching applications. It is packaged in a TO-247AD case, mounted through hole, and supports a maximum junction temperature of 175 °C. It has a 600 V collector-to-emitter voltage rating and a nominal collector current of 35 A. Continuous collector current is 50 A at 100 °C case temperature, with maximum power dissipation of 134 W. The typical collector-emitter saturation voltage is 1.6 V at 25 °C and 1.9 V at 150 °C. Gate threshold voltage ranges from 4.0 to 6.5 V. The device features a 5 μs short circuit safe operating area, reverse bias safe operating area, and thermal resistance of 0.56 °C/W from junction to case for the IGBT. The part is lead free and qualified for industrial use.