Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - FDN363N FDN363N

The FDN363N is an N-channel PowerTrench® MOSFET designed for DC/DC converters, offering a 100V drain-to-source voltage rating and a typical on-resistance of 200mΩ at 10V gate drive. It is packaged in a SuperSOT-3 case with a thermal resistance junction-to-ambient of 250°C/W when mounted on a 0.02 in² copper pad. The device supports a continuous drain current of 1A and has a single-pulse avalanche energy capability of 8.5mJ. It meets ROHS compliance and is rated for operating temperatures from -55°C to 150°C.