Rochester Electronics Memory CDM5114CD3

Description
1024-WORD X 4-BIT SRAM
  • Memory - CDM5114CD3 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
1024-WORD X 4-BIT SRAM
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - CDM5114CD3 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
CDM5114CD3
Memory CDM5114CD3
1024-WORD X 4-BIT SRAM

1024-WORD X 4-BIT SRAM

Supplier's Site Datasheet

Technical Specifications

  Lingto Electronic Limited
Product Category Memory Chips
Product Number CDM5114CD3
Product Name Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Memory
AS29LV016J
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-9089901M - Lingto Electronic Limited
Rochester Electronics
Memory
5962-9089901M
View Details
Memory IC and Storage Component - 774-NS32202D10 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
NS32202D10
View Details
2 suppliers
Memory IC and Storage Component - 505-2774_256MB_16Mx8_16C_Low_Profile - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Memory IC and Storage Component
2774_256MB_16Mx8_16C_Low_Profile
View Details