Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - BUK624R5-30C BUK624R5-30C

The BUK624R5-30C is an N-channel TrenchMOS FET designed for high-performance automotive applications, featuring a DPAK (SOT428) surface-mount package with dimensions of 6.73 mm × 9.6 mm × 2.38 mm. It operates at a maximum drain-source voltage of 30 V and supports a continuous drain current of 90 A at 25°C mounting base temperature. The device has a typical on-state resistance of 3.8 mΩ at 10 V gate drive and 25°C, and can dissipate up to 158 W under controlled thermal conditions. It is AEC-Q101 compliant, rated for junction temperatures up to 175°C, and has non-repetitive avalanche energy capability of 271 mJ. The package includes a drain-connected mounting base for enhanced thermal performance.