Nexperia B.V. 60 V, 1 A PNP medium power transistors BC52-10PA,115

Description
PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers
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Description
PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers
Request a Quote
Datasheet
Datasheet Summary
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PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm with an exposed heatsink for thermal and electrical conductivity. The device has a collector-emitter voltage rating of -60 V, a continuous collector current of -1 A, and a peak collector current of -2 A. Power dissipation capabilities vary from 0.42 W to 1.65 W depending on PCB configuration. The BC52-10PA variant provides a DC current gain range of 63 to 160 at V_CE = -2 V and I_C = -150 mA. Applications include linear voltage regulators, high-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers.

Datasheet Summary
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PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package measuring 2 mm x 2 mm x 0.65 mm with an exposed heatsink for thermal and electrical conductivity. The device has a collector-emitter voltage rating of -60 V, a continuous collector current of -1 A, and a peak collector current of -2 A. Power dissipation capabilities vary from 0.42 W to 1.65 W depending on PCB configuration. The BC52-10PA variant provides a DC current gain range of 63 to 160 at V_CE = -2 V and I_C = -150 mA. Applications include linear voltage regulators, high-side switches, battery-driven devices, power management, MOSFET drivers, and amplifiers.

Suppliers

Company
Product
Description
Supplier Links
60 V, 1 A PNP medium power transistors - BC52-10PA,115 - Nexperia B.V.
Nijmegen, Netherlands
60 V, 1 A PNP medium power transistors
BC52-10PA,115
60 V, 1 A PNP medium power transistors BC52-10PA,115
PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package. Features and benefits High current Three current gain selections High power dissipation capability Exposed heatsink for excellent thermal and electrical conductivity Leadless very small SMD plastic package with medium power capability Applications Linear voltage regulators High-side switches Battery-driven devices Power management MOSFET drivers Amplifiers

PNP medium power transistors in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package.

Features and benefits

  • High current
  • Three current gain selections
  • High power dissipation capability
  • Exposed heatsink for excellent thermal and electrical conductivity
  • Leadless very small SMD plastic package with medium power capability

Applications

  • Linear voltage regulators
  • High-side switches
  • Battery-driven devices
  • Power management
  • MOSFET drivers
  • Amplifiers
Supplier's Site Datasheet
Single Bipolar Transistors - 1727-BC52-10PA,115TR-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
1727-BC52-10PA,115TR-ND
Single Bipolar Transistors 1727-BC52-10PA,115TR-ND
Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount 3-HUSON (2x2)

Bipolar (BJT) Transistor PNP 60V 1A 145MHz 420mW Surface Mount 3-HUSON (2x2)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BC52-10PA,115 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BC52-10PA,115
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BC52-10PA,115
TRANS PNP 60V 1A 3HUSON

TRANS PNP 60V 1A 3HUSON

Supplier's Site
Transistor, Bipolar Rohs Compliant Nexperia - 28AK6304 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Bipolar Rohs Compliant Nexperia
28AK6304
Transistor, Bipolar Rohs Compliant Nexperia 28AK6304
TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

TRANSISTOR, BIPOLAR ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Nexperia B.V. DigiKey Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number BC52-10PA,115 1727-BC52-10PA,115TR-ND BC52-10PA,115 28AK6304
Product Name 60 V, 1 A PNP medium power transistors Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT) Transistor, Bipolar Rohs Compliant Nexperia
Package Type SOT1061 SOT1061 3-PowerUDFN AEC-Q100 TO-3
Polarity PNP
Transistor Grade / Operating Range Automotive
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