Rochester Electronics TRANSISTORS - Transistors - FETs, MOSFETs - RF - 2SK3115-AZ 2SK3115-AZ

The 2SK3115 is an N-channel DMOS FET designed for high-voltage switching applications such as switching power supplies and AC adapters. It is packaged in an isolated TO-220 case with a maximum drain-to-source voltage of 600 V, a continuous drain current of 6.0 A, and a maximum on-state resistance of 1.2 Ω at VGS = 10 V. The device features a gate charge of 26 nC typ. and single avalanche energy capability of 24 mJ. It meets the "Standard" quality grade for industrial use and is rated for channel temperatures up to 150 °C. The part is not qualified to AEC-Q200 or other automotive standards.