Rochester Electronics Memory 27C16Q45/B

Description
27C16Q45/B
  • Memory - 27C16Q45/B - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - 27C16Q45/B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
27C16Q45/B
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 27C16Q45/B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
27C16Q45/B
Memory 27C16Q45/B
27C16Q45/B

27C16Q45/B

Supplier's Site Datasheet
Memory - 27C16Q45/B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
27C16Q45/B
Memory 27C16Q45/B
EPROM - UV Memory IC 16Kbit Parallel 450 ns 24-DIP

EPROM - UV Memory IC 16Kbit Parallel 450 ns 24-DIP

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 27C16Q45/B 27C16Q45/B
Product Name Memory Memory
Memory Category EPROM; EPROM EPROM; EPROM
Access Time 450 ns 450 ns
Density 16 kbits 16 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Memory - PAL16R6BJ/883 - Acme Chip Technology Co., Limited
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
PAL16R6BJ/883
View Details
2 suppliers
Infineon Technologies AG
Memory IC and Storage Component
CY7C244-45WC
Specs
Memory Category EPROM; Non-Volatile
Access Time 45 ns
Operating Temperature 0 to 70 C (32 to 158 F)
View Details
Memory - AS5SP512K18 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5SP512K18
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096 kbits
View Details
Memory - 6116LA45TPG - Lingto Electronic Limited
Rochester Electronics
Memory
6116LA45TPG
Specs
Memory Category SRAM; SRAM Chip
Access Time 45 ns
Density 16 kbits
View Details