Rochester Electronics Memory 27C16Q45/B

Description
27C16Q45/B
Datasheet
Description
27C16Q45/B
Datasheet

Suppliers

Company
Product
Description
Supplier Links
27C16Q45/B

27C16Q45/B

Supplier's Site Datasheet
Memory - 27C16Q45/B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EPROM - UV Memory IC 16Kbit Parallel 450 ns 24-DIP

EPROM - UV Memory IC 16Kbit Parallel 450 ns 24-DIP

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 27C16Q45/B 27C16Q45/B
Product Name Memory Memory
Memory Category EPROM; EPROM EPROM; EPROM
Access Time 450 ns 450 ns
Density 16 kbits 16 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 593995-001-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420777 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
 - 27C128-30MD - Rochester Electronics
Rochester Electronics
Specs
Memory Category EPROM
Package Type DIP; SBCDIP
View Details
4 suppliers
 - LP3913SQX-ADJ/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details