Renesas Electronics Corporation Single FETs, MOSFETs RJK6012DPP-A0#T2

The RJK6012DPP-A0 is a 600 V, 10 A N-channel MOSFET in a TO-220FPA package, intended for high-speed power switching. It has a typical on-resistance of 0.77 Ω at 5 A and 10 V gate voltage, and a maximum channel-to-case thermal impedance of 4.17 ₊₍°C/W. The device supports a peak drain current of 20 A in pulse mode and an avalanche energy of 0.49 mJ. Its gate-to-source voltage limit is ±30 V, and it operates with a storage temperature range of −55 ₊₍°C to +150 ₊₍°C. The package dimensions are 10.0 mm in length, 3.2 mm in width, and 5.0 mm in height, with a mass of 1.65 g. It is rated as a standard quality grade product and meets the RoHS directive for environmental compliance.