Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - RJK2055DPA-00#J0 RJK2055DPA-00#J0

Manufacturer: Renesas Electronics America
Win Source Part Number: 1092295-RJK2055DPA-00#J0
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: 8-WPAK
Dimension: 8-PowerWDFN
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 20A (Ta)
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 2400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 69 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance

N-Channel 200V 20A (Ta) 30W (Tc) Surface Mount 8-WPAK (3)

MOSFET N-CH 200V 20A 8WPAK Product overview: RJK2055DPA-00#J0 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 20A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 20A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RJK2055DPA-00#J0 can be used for catalog matching and distributor lookup.