Trans MOSFET N-CH 40V 82A 3-Pin(2+Tab) TO-263 T/R Product overview: NP82N04PUG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 82A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 82A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NP82N04PUG-E1-AY
Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1082623-NP82N04PUG-E
Packaging: Tape & Reel
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 40 V
Number of Elements: 1
Input Capacitance: 9.75 nF
Power Dissipation: 1.8 W
Rise Time: 102 ns
Fall Time: 13 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: TO-263-3
Popularity: Low
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 175 °C
Mount: Surface Mount
RoHS: Compliant
Min Operating Temperature: -55 °C
Max Power Dissipation: 1.8 W
Turn-On Delay Time: 39 ns
Continuous Drain Current (ID): 82 A
Turn-Off Delay Time: 67 ns
Gate to Source Voltage (Vgs): 20 V
Rds On Max: 3.5 mΩ
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-NP82N04PUG-E1-AY | 1082623-NP82N04PUG-E1-AY |
| Product Name | 40V 82A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP82N04PUG-E1-AY |
| PD | 1.8 milliwatts | 1800 milliwatts |