MOSFET N-CH 55V 22A TO-252 Product overview: NP22N055SLE-E1 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 22A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 22A, TO-252, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NP22N055SLE-E1 can be used for catalog matching and distributor lookup.
Manufacturer: Renesas Electronics America
Win Source Part Number: 258889-NP22N055SLE-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.2W (Ta), 45W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-252 (MP-3ZK)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 22A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 23nC @ 5V
Max Input Capacitance: 1100pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 37 mOhm @ 11A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-NP22N055SLE-E1 | 258889-NP22N055SLE-E1 |
| Product Name | 55V 22A TO-252 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP22N055SLE-E1 |
| Polarity | N-Channel | N-Channel; N-Channel |
| PD | 1200 milliwatts | 1200 to 45000 milliwatts |
| TJ | 175 C (347 F) | 175 C (347 F) |