Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP22N055SLE-E1 NP22N055SLE-E1

Manufacturer: Renesas Electronics America Win Source Part Number: 258889-NP22N055SLE-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.2W (Ta), 45W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 (MP-3ZK) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 22A (Ta) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 23nC @ 5V Max Input Capacitance: 1100pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 37 mOhm @ 11A, 10V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance