Renesas Electronics Corporation Single FETs, MOSFETs HAT2279H-EL-E

N-Channel 80V 30A (Ta) 25W (Tc) Surface Mount LFPAK

Manufacturer: Renesas Electronics America
Win Source Part Number: 067815-HAT2279H-EL-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 80V
Continuous Drain Current at 25°C: 30A (Ta)
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 3520pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 15A, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

MOSFET N-CH 80V 30A LFPAK Product overview: HAT2279H-EL-E from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 80V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-HAT2279H-EL-E can be used for catalog matching and distributor lookup.