MOSFET N-CH 30V 55A LFPAK Product overview: HAT2165H from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 55A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 55A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-HAT2165H can be used for catalog matching and distributor lookup.
Manufacturer: Renesas Electronics America
Win Source Part Number: 204571-HAT2165H
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 30W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: LFPAK
Dimension: SC-100, SOT-669
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 55A (Ta)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 33nC @ 4.5V
Max Input Capacitance: 5180pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.3 mOhm @ 27.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | |
|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-HAT2165H | 204571-HAT2165H |
| Product Name | 30V 55A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - HAT2165H |
| Polarity | N-Channel | N-Channel; N-Channel |
| PD | 30000 milliwatts | 30000 milliwatts |
| TJ | 150 C (302 F) | 150 C (302 F) |