Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - H5N2503PE H5N2503PE

Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1061573-H5N2503PE Drain to Source Voltage (Vdss): 250 V Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFP4332PBF; IRFB4332PBF; IPP220N25NFDAKSA1; FDPF51N25; FDP51N25; STW52NK25ZH5N2503P(E ); H5N2503P-E; Popularity: Low Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Shortage RoHS: Non-Compliant Continuous Drain Current (ID): 50 A
Request a Quote
Description
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1061573-H5N2503PE Drain to Source Voltage (Vdss): 250 V Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFP4332PBF; IRFB4332PBF; IPP220N25NFDAKSA1; FDPF51N25; FDP51N25; STW52NK25ZH5N2503P(E ); H5N2503P-E; Popularity: Low Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Shortage RoHS: Non-Compliant Continuous Drain Current (ID): 50 A
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - H5N2503PE - 1061573-H5N2503PE - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - H5N2503PE
1061573-H5N2503PE
TRANSISTORS - Transistors - FETs, MOSFETs - RF - H5N2503PE 1061573-H5N2503PE
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1061573-H5N2503PE Drain to Source Voltage (Vdss): 250 V Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): IRFP4332PBF; IRFB4332PBF; IPP220N25NFDAKSA1; FDPF51N25; FDP51N25; STW52NK25ZH5N2503P(E ); H5N2503P-E; Popularity: Low Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Shortage RoHS: Non-Compliant Continuous Drain Current (ID): 50 A

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1061573-H5N2503PE
Drain to Source Voltage (Vdss): 250 V
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): IRFP4332PBF; IRFB4332PBF; IPP220N25NFDAKSA1; FDPF51N25; FDP51N25; STW52NK25ZH5N2503P(E); H5N2503P-E;
Popularity: Low
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Shortage
RoHS: Non-Compliant
Continuous Drain Current (ID): 50 A

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1061573-H5N2503PE
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - H5N2503PE
Package Type TO-3; SOT3
Unlock Full Specs
to access all available technical data

Similar Products

MOSFETs - 348943 - RS Components, Ltd.
Infineon Technologies AG
Specs
Package Type PG-TO247-4
View Details
2 suppliers
Dual P-Channel Matched MOSFET Pair - ALD1102BPAL - Advanced Linear Devices, Inc.
Specs
Polarity P-Channel
MOSFET Operating Mode Enhancement; Enhancement Mode
V(BR)DSS 12 volts
View Details
3 suppliers
CSD17575Q3 30-V, N-Channel NexFET(TM) Power MOSFET - CSD17575Q3 - Texas Instruments
Specs
Polarity N-Channel
V(BR)DSS 30 volts
rDS(on) 0.0032 ohms
View Details
9 suppliers