Renesas Electronics Corporation Memory 70P264L40BYGI8

Description
SRAM - Dual Port, Asynchronous Memory IC 256Kbit Parallel 40 ns 81-CABGA (5x5)
Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 256Kbit Parallel 40 ns 81-CABGA (5x5)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 70P264L40BYGI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Dual Port, Asynchronous Memory IC 256Kbit Parallel 40 ns 81-CABGA (5x5)

SRAM - Dual Port, Asynchronous Memory IC 256Kbit Parallel 40 ns 81-CABGA (5x5)

Buy Now Datasheet
IC SRAM 256KBIT PARALLEL 81CABGA

IC SRAM 256KBIT PARALLEL 81CABGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number 70P264L40BYGI8 70P264L40BYGI8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 40 ns 40 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71T016SA12PH - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Density 1000 kbits
View Details
Memory - MYXX28HC256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 70 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - A2C00051189 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers