Renesas Electronics Corporation Memory 7006S35G

Description
SRAM - Dual Port, Asynchronous Memory IC 128Kbit Parallel 35 ns 68-PGA (29.46x29.46)
Datasheet
Description
SRAM - Dual Port, Asynchronous Memory IC 128Kbit Parallel 35 ns 68-PGA (29.46x29.46)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 7006S35G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
7006S35G
Memory 7006S35G
SRAM - Dual Port, Asynchronous Memory IC 128Kbit Parallel 35 ns 68-PGA (29.46x29.46)

SRAM - Dual Port, Asynchronous Memory IC 128Kbit Parallel 35 ns 68-PGA (29.46x29.46)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
7006S35G
Integrated Circuits (ICs) - Memory - Memory 7006S35G
IC SRAM 128KBIT PARALLEL 68PGA

IC SRAM 128KBIT PARALLEL 68PGA

Supplier's Site
Memory 7006S35G
IC SRAM 128KBIT PARALLEL 68PGA

IC SRAM 128KBIT PARALLEL 68PGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 7006S35G 7006S35G 7006S35G
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 35 ns 35 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Density 128 kbits 128 kbits 128 kbits
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