Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK1567-E

Description
N-CHANNEL POWER MOSFET
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK1567-E - Acme Chip Technology Co., Limited
    Acme Chip Technology Co., Limited
Description
N-CHANNEL POWER MOSFET

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - 2SK1567-E - Acme Chip Technology Co., Limited
Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
2SK1567-E
Discrete Semiconductor Products - Transistors - FETs, MOSFETs 2SK1567-E
N-CHANNEL POWER MOSFET

N-CHANNEL POWER MOSFET

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category RF Transistors
Product Number 2SK1567-E
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Packing Method Bulk; Bulk
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR - 906251-2N3904TAR - Win Source Electronics
Rochester Electronics
TRANSISTORS - Transistors (BJT) - Single - 2N3904TAR
2N3904TAR
Specs
Transistor Type Bipolar RF
Polarity NPN
Package Type TO-92; SOT3; TO-92-3
View Details
SemiQ Inc. - GP2T020A120X - Micross Components, Inc.
Micross Components, Inc.
SemiQ Inc.
GP2T020A120X
View Details
Single FETs, MOSFETs - AUIRFU1010Z-ND - DigiKey
Infineon Technologies AG
Single FETs, MOSFETs
AUIRFU1010Z
Specs
Package Type TO-262-3 Long Leads, I2PAK, TO-262AA
Transistor Grade / Operating Range Automotive
View Details
4 suppliers
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor - QPD0060 - Qorvo
Qorvo
DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
QPD0060
Specs
Transistor Technology / Material DC - 3.6 GHz, 90 Watt, 48 Volt GaN RF Power Transistor
Package Type DFN
Power Gain 25 dB
View Details