Renesas Electronics Corporation 2SA715VC

PNP silicon epitaxial transistor for low frequency power amplifier applications, housed in a TO-126 MOD package, with a maximum collector-to-base voltage of -35 V, collector-to-emitter voltage of -35 V, emitter-to-base voltage of -5 V, continuous collector current of -2.5 A, peak collector current of -3 A, and collector power dissipation of 0.75 W at 25°C, junction temperature rating of 150 °C, and DC current gain (hFE) ranging from 60 to 320 at -2 V and -0.5 A.