Renesas Electronics Corporation 2SA673AKC-E

Description
Small Signal Bipolar Transistor, 0.5A, 50V, PNP
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Description
Small Signal Bipolar Transistor, 0.5A, 50V, PNP
Request a Quote
Datasheet
Datasheet Summary
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The 2SA673A(K) is a silicon PNP bipolar transistor for low frequency amplification and medium speed switching, housed in a TO-92 (1) package measuring 7.21 mm in length, 3.8 mm in width, and 4.8 mm in height, with a mass of 0.25 g. It has a collector-to-base voltage rating of -50 V, a collector-to-emitter voltage rating of -50 V, and a maximum collector current of -0.5 A. The collector power dissipation is 0.4 W, and the junction temperature ranges from -55 °C to 150 °C. The DC current gain (hFE) is grouped in bins of 60 to 120, 100 to 200, or 160 to 320 at -3 V and -10 mA. It meets RoHS standards.

Datasheet Summary
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The 2SA673A(K) is a silicon PNP bipolar transistor for low frequency amplification and medium speed switching, housed in a TO-92 (1) package measuring 7.21 mm in length, 3.8 mm in width, and 4.8 mm in height, with a mass of 0.25 g. It has a collector-to-base voltage rating of -50 V, a collector-to-emitter voltage rating of -50 V, and a maximum collector current of -0.5 A. The collector power dissipation is 0.4 W, and the junction temperature ranges from -55 °C to 150 °C. The DC current gain (hFE) is grouped in bins of 60 to 120, 100 to 200, or 160 to 320 at -3 V and -10 mA. It meets RoHS standards.

Suppliers

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Product
Description
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 - 2SA673AKC-E - Rochester Electronics
Newburyport, MA, United States
Small Signal Bipolar Transistor, 0.5A, 50V, PNP

Small Signal Bipolar Transistor, 0.5A, 50V, PNP

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number 2SA673AKC-E
Polarity PNP
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