Rochester Electronics TRANSISTORS - Transistors (BJT) - Single - 2SC3749M 2SC3749M

The 2SC3749 is an NPN triple diffused planar silicon transistor designed for switching regulator applications, featuring a high breakdown voltage of 500 V and a 3 A continuous collector current. It is housed in a TO-220ML micaless package with dimensions of 20.41 mm in length, 2.8 mm width, and 5.3 mm height. The device supports a peak collector current of 6 A under pulse conditions, a collector dissipation of 25 W at Tc=25°C, and a maximum junction temperature of 150°C. Electrical characteristics include a minimum hFE of 15 at VCE=5 V and IC=0.3 A, a gain-bandwidth product of 18 MHz, and a collector-to-emitter saturation voltage of 1.0 V at IC=1.5 A and IB=0.3 A. The transistor meets the AEC-Q200 qualification standard for automotive applications. The hFE1 rating is classified into grades L, M, and N, covering ranges of 15-30, 20-40, and 30-50 respectively, requiring specification of multiple ranks when ordering.