The RMP7N80TI is an N-channel enhancement mode MOSFET in a TO-220F package, designed for high-efficiency switching applications such as switch-mode power supplies and UPS systems. It features low gate charge, fast switching, and 100% avalanche energy testing. The device has a drain-source breakdown voltage of 800 V and a continuous drain current of 7 A at 25°C. It meets the AEC-Q200 standard for automotive reliability and is RoHS compliant.
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The RMP7N80TI is an N-channel enhancement mode MOSFET in a TO-220F package, designed for high-efficiency switching applications such as switch-mode power supplies and UPS systems. It features low gate charge, fast switching, and 100% avalanche energy testing. The device has a drain-source breakdown voltage of 800 V and a continuous drain current of 7 A at 25°C. It meets the AEC-Q200 standard for automotive reliability and is RoHS compliant.
