Rectron Semiconductor Inc. MOSFET RM8N650LD-T

The RM8N650LD-T is an N-channel super junction MOSFET designed for AC-DC power conversion, PFC, and industrial power applications. It is packaged in a TO-252 format with maximum dimensions of 6.70 mm by 6.20 mm and a lead pitch of 2.186 to 2.386 mm. The device supports a drain-source voltage of 650 V, continuous drain current of 5.2 A at 100°C, and has a maximum on-resistance of 540 mΩ at 10 V gate voltage. It features a gate charge of up to 22 nC, a peak avalanche current of 4 A, and is rated for junction and storage temperatures from -55°C to +150°C. The part complies with RoHS standards and is 100% avalanche tested. Thermal resistance from junction to case is 1.56 °C/W, and junction to ambient is 62 °C/W.