Rectron Semiconductor Inc. MOSFET RM8N650IP

The RM8N650IP is an N-channel super junction MOSFET in a TO-251 package designed for AC-DC SMPS applications such as PFC and UPS. It has a drain-source voltage rating of 650 V and a continuous drain current of 8 A at 25°C case temperature. The device features a maximum on-resistance of 540 mΩ at 10 V gate voltage and a total gate charge of 22 nC. It is rated for 185 mJ single-pulse avalanche energy and has a thermal resistance from junction-to-case of 1.56 °C/W. The operating junction and storage temperature range is -55°C to +150°C. The part is ROHS compliant and 100% avalanche tested.