Rectron Semiconductor Inc. MOSFET RM6N800IP

Description
MOSFET TO-251 MOSFET
Description
MOSFET TO-251 MOSFET
Datasheet
Datasheet Summary
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The RM6N800IP is an N-channel MOSFET in a TO-251 package, rated for a drain-source voltage of 800 V and a continuous drain current of 6 A at 25°C. It features a typical on-resistance of 1.7 Ω at 10 V gatedrive and a gate charge of 30 nC. The device complies with RoHS standards and is designed for general-purpose switching applications.

Datasheet Summary
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The RM6N800IP is an N-channel MOSFET in a TO-251 package, rated for a drain-source voltage of 800 V and a continuous drain current of 6 A at 25°C. It features a typical on-resistance of 1.7 Ω at 10 V gatedrive and a gate charge of 30 nC. The device complies with RoHS standards and is designed for general-purpose switching applications.

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Sheung Wan, Hong Kong
MOSFET TO-251 MOSFET

MOSFET TO-251 MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RM6N800IP
Product Name MOSFET
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