Rectron Semiconductor Inc. MOSFET RM5N700LD-T

Description
MOSFET D-PAK MOSFET
Description
MOSFET D-PAK MOSFET
Datasheet
Datasheet Summary
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The RM5N700LD is an N-channel super junction MOSFET in a TO-252 package, designed for AC-DC switching power supplies, PFC, and industrial power applications. It features a 700 V drain-source breakdown voltage, a typical on-resistance of 840 mΩ at 2.5 A, and a pulsed drain current rating of 15 A. The device has a low gate charge of 10 to 20 nC, enabling reduced driving requirements, and is 100% avalanche tested with a single pulse avalanche energy of 135 mJ. Thermal resistance junction-to-case is 2.55 °C/W, and junction temperature ranges from -55 °C to +150 °C. The part is RoHS compliant and designed for high-efficiency power conversion.

Datasheet Summary
Powered by GS/AI

The RM5N700LD is an N-channel super junction MOSFET in a TO-252 package, designed for AC-DC switching power supplies, PFC, and industrial power applications. It features a 700 V drain-source breakdown voltage, a typical on-resistance of 840 mΩ at 2.5 A, and a pulsed drain current rating of 15 A. The device has a low gate charge of 10 to 20 nC, enabling reduced driving requirements, and is 100% avalanche tested with a single pulse avalanche energy of 135 mJ. Thermal resistance junction-to-case is 2.55 °C/W, and junction temperature ranges from -55 °C to +150 °C. The part is RoHS compliant and designed for high-efficiency power conversion.

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Sheung Wan, Hong Kong
MOSFET D-PAK MOSFET

MOSFET D-PAK MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RM5N700LD-T
Product Name MOSFET
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