The RM5N650LD-T is an N-channel super junction MOSFET in a TO-252 package, designed for AC-DC power conversion, PFC, and industrial power applications. It operates at a drain-source voltage of 650 V with a continuous drain current of 3 A at Tc=100°C and a maximum on-resistance of 900 mΩ at VGS=10 V. The device has a total gate charge of up to 20 nC, a single pulse avalanche energy of 135 mJ, and is rated for operation from -55°C to +150°C. It meets RoHS compliance and is 100% avalanche tested.
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RM5N650LD-T |
| Product Name | MOSFET |
