Rectron Semiconductor Inc. MOSFET RM50P30DF

The RM50P30DF is a P-channel enhancement mode power MOSFET designed for battery and loading switching applications. It is packaged in a DFN 5x6 EP format with dimensions of 4.944 to 5.096 mm in length and 5.974 to 6.126 mm in width, featuring an exposed thermal pad for improved heat dissipation. The device has a drain-source voltage rating of -30 V, a continuous drain current of -50 A, and an on-state resistance of 7 mΩ maximum at -10 V gate-source voltage. It is rated for a maximum power dissipation of 35 W and a junction temperature range of -55°C to 150°C. The thermal resistance from junction to case is 3.6°C/W. The part is 100% UIS tested and supports single pulse avalanche energy up to 300 mJ. It meets no stated industry standards beyond its electrical and thermal ratings.