Rectron Semiconductor Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single RM4N650IP

Win Source Part Number: 965354-RM4N650IP Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Package: Tube Standard Package: 800 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 46W (Tc) Mounting Type: Through Hole Package / Case: TO-251-3 Stub Leads, IPak Supplier Device Package: TO-251 Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 50 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) HTSUS: 8541.10.0080 Mfr: Rectron USA Other Names: 2516-RM4N650IP Drive Voltage (Max Rds On, Min Rds On): 10V