Rectron Semiconductor Inc. MOSFET RM45P20D3

The RM45P20D3 is a P-channel enhancement mode power MOSFET designed for load switching and battery protection applications. It is packaged in a DFN 3.3x3.3 mm with an exposed pad for improved thermal dissipation. The device has a drain-source voltage rating of -19 V and a continuous drain current of -45 A at 25°C, reducing to -35 A at 100°C case temperature. Its on-state resistance is specified at 7 mΩ maximum at -4.5 V gate bias, 9 mΩ at -2.5 V, and 12 mΩ at -1.8 V. The gate-source voltage is rated up to ±12 V. It supports avalanche energy with stable performance and meets a maximum power dissipation of 80 W with a thermal resistance junction-to-case of 1.6°C/W. The operating junction and storage temperature range is from -55°C to 150°C.