Rectron Semiconductor Inc. MOSFET RM185N30DF

Description
MOSFET DFN MOSFET
Description
MOSFET DFN MOSFET
Datasheet
Datasheet Summary
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The RM185N30DF is an N-channel Super Trench power MOSFET designed for high-frequency switching and synchronous rectification. It is packaged in a DFN5X6-8L case and operates at a maximum junction temperature of 150°C. The device has a drain-source voltage rating of 30 V and a continuous drain current of 185 A at 25°C, dropping to 140 A at 100°C. Its typical on-state resistance is 1.1 mΩ at VGS = 10 V and 1.45 mΩ at VGS = 4.5 V. The MOSFET is 100% UIS tested and features a total gate charge of 125 to 140 nC. It meets a maximum power dissipation of 95 W with a derating factor of 0.76 W/°C.

Datasheet Summary
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The RM185N30DF is an N-channel Super Trench power MOSFET designed for high-frequency switching and synchronous rectification. It is packaged in a DFN5X6-8L case and operates at a maximum junction temperature of 150°C. The device has a drain-source voltage rating of 30 V and a continuous drain current of 185 A at 25°C, dropping to 140 A at 100°C. Its typical on-state resistance is 1.1 mΩ at VGS = 10 V and 1.45 mΩ at VGS = 4.5 V. The MOSFET is 100% UIS tested and features a total gate charge of 125 to 140 nC. It meets a maximum power dissipation of 95 W with a derating factor of 0.76 W/°C.

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Sheung Wan, Hong Kong
MOSFET DFN MOSFET

MOSFET DFN MOSFET

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number RM185N30DF
Product Name MOSFET
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