Rectron Semiconductor Inc. MOSFET RM15P30S8-T

The RM15P30S8 is a P-channel enhancement mode power MOSFET in an SOP-8 surface mount package, designed for load switching and PWM applications. It has a drain-source voltage rating of -30 V and a continuous drain current of -15 A, with a maximum on-state resistance of 12 mΩ at -10 V gate-source voltage. The device supports a maximum power dissipation of 3.1 W and operates from -55°C to 150°C. Thermal resistance from junction to ambient is 40°C/W when mounted on an FR4 board. Input, output, and reverse transfer capacitances are 2900 pF, 410 pF, and 280 pF respectively at 1 MHz. Switching times include a turn-on rise time of 11 ns and a turn-off fall time of 21 ns. The product is lead-free and compliant with RoHS. The packaging uses a 12 mm tape on a 330 mm reel with 2500 units per reel.