Rectron Semiconductor Inc. MOSFET RM100N60T2

The RM100N60T2 is an N-channel enhancement mode power MOSFET for power switching applications, packaged in a TO-220-3L case measuring 12.9-13.4 mm in length, 9.91-10.25 mm in body width, and 8.95-9.75 mm in lead spacing. It has a 60 V drain-source voltage rating and a continuous drain current of 100 A at 25°C. Its maximum on-state resistance is 6.5 mΩ at V_GS = 10 V, with a typical value of 5.7 mΩ. The device supports a pulsed drain current of 320 A and can dissipate 170 W, with a junction-to-case thermal resistance of 0.88°C/W. It operates from -55°C to 175°C and has a single pulse avalanche energy rating of 550 mJ. The MOSFET is 100% UIS tested and complies with RoHS standards.