Qorvo DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT TGF2952

Description
Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency applications. Lead-free and RoHS compliant.
  • DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT - TGF2952 - Qorvo
    Qorvo
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Description
Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency applications. Lead-free and RoHS compliant.
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Suppliers

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DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT - TGF2952 - Qorvo
Qorvo
Greensboro, NC, United States
DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT
TGF2952
DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT TGF2952
Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz. The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency applications. Lead-free and RoHS compliant.

Qorvo's TGF2952 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-14 GHz.

The TGF2952 typically provides 38.4 dBm of saturated output power with power gain of 20.4 dB at 3 GHz. The maximum power added efficiency is 75.7 % which makes the TGF2952 appropriate for high efficiency applications.

Lead-free and RoHS compliant.

Supplier's Site Datasheet

Technical Specifications

  Qorvo
Product Category RF Transistors
Product Number TGF2952
Product Name DC - 14 GHz, 7 Watt Discrete Power GaN on SiC HEMT
Transistor Technology / Material GaN on SiC
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