The QPD1014A is a 15W (P3dB), 50V, input-matched GaN on SiC HEMT transistor designed for operation from 30 MHz to 1.2 GHz. It is housed in a 6 x 5 x 0.85 mm leadless SMT package. The device features an integrated 50 Ω input match, CW and pulse capability, and low thermal resistance. Thermal resistance (Junction-to-Case) ranges from 6.48 °C/W to 7.3 °C/W depending on dissipated power, with peak case temperatures up to 194.5 °C at 15 W dissipation under CW operation at 85 °C backside temperature. Applications include base stations, radar systems, and land mobile communications.
15W, 30-1200 MHZ, GAN RF INPUT-M
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2312-QPD1014ATR7TR-ND |
| Product Name | RF FETs, MOSFETs |
| Package Type | 8-VDFN Exposed Pad |
