Qorvo 10.7 - 12.7 GHz, 17.5 Watt GaN Amplifier QPA1009D

Description
Qorvo's QPA1009D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009D provides > 17.5 Watts of saturated output power and 17 dB of large-signal gain while achieving > 40% power-added efficiency. The QPA1009D RF input port is DC coupled to ground for optimum ESD performance. The QPA1009D RF ports have DC blocking capacitors and are matched to 50 ohms. The QPA1009D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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Description
Qorvo's QPA1009D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009D provides > 17.5 Watts of saturated output power and 17 dB of large-signal gain while achieving > 40% power-added efficiency. The QPA1009D RF input port is DC coupled to ground for optimum ESD performance. The QPA1009D RF ports have DC blocking capacitors and are matched to 50 ohms. The QPA1009D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.
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Suppliers

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Product
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Supplier Links
10.7 - 12.7 GHz, 17.5 Watt GaN Amplifier - QPA1009D - Qorvo
Greensboro, NC, United States
10.7 - 12.7 GHz, 17.5 Watt GaN Amplifier
QPA1009D
10.7 - 12.7 GHz, 17.5 Watt GaN Amplifier QPA1009D
Qorvo's QPA1009D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009D provides > 17.5 Watts of saturated output power and 17 dB of large-signal gain while achieving > 40% power-added efficiency. The QPA1009D RF input port is DC coupled to ground for optimum ESD performance. The QPA1009D RF ports have DC blocking capacitors and are matched to 50 ohms. The QPA1009D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems. Lead-free and RoHS compliant. For additional information on GaN thermal performance refer to the following application note and video.

Qorvo's QPA1009D is a wide band power amplifier MMIC fabricated on Qorvo's production 0.15 um GaN on SiC process (QGaN15). Covering 10.7 – 12.7 GHz, the QPA1009D provides > 17.5 Watts of saturated output power and 17 dB of large-signal gain while achieving > 40% power-added efficiency.

The QPA1009D RF input port is DC coupled to ground for optimum ESD performance. The QPA1009D RF ports have DC blocking capacitors and are matched to 50 ohms.

The QPA1009D can support a wide range of operating conditions, including CW operation, making it well-suited for both commercial and military systems.

Lead-free and RoHS compliant.

For additional information on GaN thermal performance refer to the following application note and video.

Supplier's Site Datasheet
RF Amplifiers - 2312-QPA1009D-ND - DigiKey
Thief River Falls, MN, United States
RF Amplifiers
2312-QPA1009D-ND
RF Amplifiers 2312-QPA1009D-ND
10.7 - 12.7 GHZ, 17.5 W GAN AMP

10.7 - 12.7 GHZ, 17.5 W GAN AMP

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Technical Specifications

  Qorvo DigiKey
Product Category RF Amplifiers RF Amplifiers
Product Number QPA1009D 2312-QPA1009D-ND
Product Name 10.7 - 12.7 GHz, 17.5 Watt GaN Amplifier RF Amplifiers
Applications Radar Systems; SATCOM Radar
RoHS Compliant RoHS
Frequency Range 10700 to 12700 MHz 10700 to 12700 MHz
Minimum Gain 17 dB 22.1 dB
Maximum Gain 17 dB 22.1 dB
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